1 to-220f item symbol ratings unit drain-source voltage v ds 250 v dsx *5 220 continuous drain current i d 37 pulsed drain current i d(puls] 148 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 37 maximum avalanche energy e as *1 251.9 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.16 tc=25 c 95 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3555-01MR fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =250v v gs =0v v ds =200v v gs =0v v gs =30v i d =12.5a i d =12.5a v ds =25v v cc =72v i d =12.5a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 1.316 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =72v i d =12a v gs =10v l=309 h t ch =25c i f =25a v gs =0v t ch =25c i f =25a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c kvrms 250 3.0 5.0 25 250 10 100 75 100 816 2000 3000 220 330 15 30 20 30 30 45 60 90 20 30 44 66 14 21 16 24 37 1.10 1.65 0.45 1.5 -55 to +150 outline drawings [mm] *3 i f =-i d , -di/dt=50a/s, vcc=bv dss , tch=150c < << equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series v gs =10v 200304 *1 l=309h, vcc=48v, see to avalanche energy graph *2 tch=150c < = < *4 v ds 250v *5 v gs =-30v *6 t=60sec f=60hz
2 characteristics 2SK3555-01MR fuji power mosfet id=f(vds):80s pulse test,tch=25c 024681012 0 20 40 60 80 100 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance -50 -25 0 25 50 75 100 125 150 0 30 60 90 120 150 180 210 240 270 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=12.5a,vgs=10v id=f(vgs):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0 20406080100 0.00 0.05 0.10 0.15 0.20 0.25 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v gfs=f(id):80s pulse test, vds=25v,tch=25c 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 2SK3555-01MR fuji power mosfet vgs=f(qg):id=25a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=72v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c] 0 102030405060 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs [v] 96v 72v vcc= 36v 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 ias=15a ias=22a ias=37a eas [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(as)=f(starting tch):vcc=48v
4 2SK3555-01MR fuji power mosfet http://www.fujielectric.co.jp/denshi/scd 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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